Euv light source

Extreme ultraviolet lithography is a next-generation lithography technology using an extreme ultraviolet ( EUV ) wavelength, currently expected to be 13. Light source power and throughput . Companies developing EUV tools can depend on the reliability and operational performance of the Adlyte EUV sources. Our products enable high throughput and low down time in high volume . Laser-produced plasma is expected to fulfill the strict requirement as an extreme ultraviolet ( EUV ) light source for the next-generation lithography with 1.

In order to meet the performance requirements for an EUV light source , we have focused on three enabling technologies:(1)high conversion efficiency (CE), efficiency from COlaser to EUV light energy;(2)debris mitigation functionality, Sn debris mitigation from optical components;(3)COlaser power . The output power required for high-volume production is 2W or more. But, the present EUV light source for production use has the output power of approx. This paper describes the development of a laser-produced-plasma (LPP) extreme-ultraviolet ( EUV ) source for advanced lithography applications in high volume manufacturing. EUV lithography is expected to succeed 193nm immersion double patterning technology for sub-20nm critical layer patterning.

This report describes where the development of ArF excimer lasers for lithography and that of COlaser-excited LPP- EUV sources for next-generation lithography currently stand and where they are headed in the future. Key Words: ArF, EUV , Lithography, Production of semiconductors, Development of light sources , Pulsed .

University of California, Berkeley. Sn droplets at kHz, captured using strobe lighting. High average power EUV light source has been the “most critical” issue in the research and development of the EUV lithography system in one decade.

EUV LLC and International Sematech significantly stimulated the global research community to work seriously to advance plasma technology in achieving the goal of the . In the development of a high power EUV source used in the EUV lithography system, it is important to understand basic physics of EUV plasma and to optimize laser and target conditions. We have been constructed EUV database of laser- produced tin plasma by the theoretical and experimental studies. A high rep-rate, compact and low-debris xenon Z-pinch discharge system has been designed and fabricated as an EUV light source , in which a newly developed gas jet-type Z-pinch source is used. The discharge head has a coaxial double nozzle and diffuser.

Xenon Z-pinch plasma that emits EUV light is produced in . PW In this plenary session, Hakaru Mizoguchi of. A CPU has over a 1million transistors and this is increasing by each year. This forecast cannot be achieved with current lithographic techniques.

Conversion Efficiency of EUV Sources. Extreme Ultraviolet lithography could be the way forward. Xe, Sn, and Li conversion efficiency. Factors influencing effective EUV light collection.

Geometrical collector efficiency. In EUV , a power source converts plasma into light at 13. Then the light bounces off several mirrors before hitting the wafer.

At the shorter end of this range, light has typically only been available to researchers at the national laboratory synchrotrons. EUV (extreme ultraviolet) exposure technology at 13. USHIO is conducting EUV light source development for photo mask inspection and for various other technical applications utilizing our experience in the study and development of our EUV Xe.